| PART |
Description |
Maker |
| SFH4391 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
From old datasheet system
|
Infineon
|
| Q68000-A8000 IRL81 IRL81A |
From old datasheet system
GaAlAs-Infrarot-Sendediode GaAlAs Infrared Emitter
ECONOLINE: RB & RA - Dual Output from a Single Input Rail- Power Sharing on Output- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- Custom Solutions Available- UL94V-0 Package Material- Efficiency to 85% 发动 Infrarot - Sendediode GaAlA红外发射
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SFH458002 SFH4580 SFH4585 |
GaAlAs Infrared Emitters (880 nm) in SMR? Package
GaAlAs Infrared Emitters (880 nm) in SMR庐 Package
GaAlAs Infrared Emitters (880 nm) in SMR㈢ Package
|
OSRAM GmbH
|
| TSHA440. TSHA4400 TSHA440 TSHA4401 |
GaAlAs Infrared Emitting Diodes in ?3 mm (T-1) Package
From old datasheet system
GaAlAs Infrared Emitting Diodes in 3 mm (T-1) Package
GaAlAs Infrared Emitting Diodes in ? 3 mm (T?1)Package
|
VISAY[Vishay Siliconix]
TFUNK[Vishay Telefunken]
|
| SFH7221 SFH7221-Z |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
|
OSA Opto Light GmbH
OSRAM GmbH
|
| TLN233 |
TOSHIBA Infrared LED GaALAs Infrared Emitter
|
TOREX SEMICONDUCTOR LTD.
Toshiba Semiconductor
|
| OP296 OP295 OP297 |
GaAlAs Plastic Infrared Emitting Diode(铝砷化镓塑料封装红外发光二极窄入射模式，峰值前向电.0A)
GaAlAs Plastic Infrared Emitting Diode(??????濉??灏??绾㈠????浜??绠?绐??灏?ā寮??宄板?????垫悼.0A)
|
Optek Technology
|
| MIE-114A1 114A1 |
Infrared Emitting Diodes (IRED)
GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TLN208 |
LED LAMP GaAlAs INFRARED EMITTER
INFRARED LIGHT - EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Semiconductor
Toshiba Corporation
|
| MIE-556L3U MIE-546L3U 556L3U |
Infrared Emitting Diodes (UL Listed)
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
| HE8404SG_06 HE8404SG06 |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
